Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) uniform color

uniform color

This cell is especially suitable for post-analysis of target electrode to determine the limiting factors of battery efficiency and stability

Thickness: 0

One 24VDC pump is included (Since Aug 2017)

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) uniform colorSingle crystal Si Conductivity: N type ( P doped) Resistivity: 0. 1 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01