Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp Ni Thickness: 11 um

Thickness: 11 um

Product Dimensions 380*300*530mm 380*300*530mm 350*300*480mm Warranty One Year limited warranty with lifetime support (Rusting and damage due to improper storage condition or maintenance are not covered by warranty) Operation Manual & Video Net Weight 50Kg 41Kg 37Kg

Fast crushing and grinding the sample of ceramic and steel to 80-200 mesh before milling

Can be used in both dry and wet conditions

Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp Ni Thickness: 11 umSpecifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 20 50 nm 0. 525 mm thickness Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , RA < 10 nm Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order