M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current The purpose of this Specification

The purpose of this Specification is to define a standard description of data

This Specification defines the dimensions of container (refer to ¶ 5

本安全基準適用於由多家公司人員（如設備供應商、廠務設施供應商、使用者及其承攬商）共同使用的工作區。

of wafer bonding equipment

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current The purpose of this SpecificationIn recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other