Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type ,Undoped with resistivities:> 15,000 ohm-cm SiC Film (3C) on Si Wafer BOW: <=20 um

BOW:                               <=20 um

These prototype pouch cell can be used to compare various electrode materials in the same cell structure

click pic 2 to order)

EPD                                                                   <50000 cm^-2

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type ,Undoped with resistivities:> 15,000 ohm-cm SiC Film (3C) on Si Wafer BOW: <=20 umSingle crystal: Si Conductivity: Undoped Type: N Resistivity:>15000 ohm CM Size: 4" diameter x 0. 5 mm Orientation:(100) Polish: One side polished Surface roughness:< 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01 Micro Fiber & Dust Free Wiper, 4"x4", 100 pcs bag Wiper yx 2001 Vacuum Pen SMT 150C (NEW) EQ SMT 150C Single Wafer Containers