Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Change in Current: Upto 10mA
$228.85
Description
Change in Current: Upto 10mA
8 polymer battery analyzer clamp with temperature detector and cable for universal connecting (compatible for pouch cell and cylindrical cell
Chamber Diameter: 145 mm
5mm(ID) x 49mm(H)
Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Change in Current: Upto 10mASpecifications: Cu coated SiO2 Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
You may also like
US$ 20.00
US$ 25.00
US$ 22.00
US$ 20.00