film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag"> Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Change in Current: Upto 10mA – digilifeset.online

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Change in Current: Upto 10mA

$228.85

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Change in Current: Upto 10mA

8 polymer battery analyzer clamp with temperature detector and cable for universal connecting (compatible for pouch cell and cylindrical cell

Chamber Diameter: 145 mm

5mm(ID) x 49mm(H)

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp Br Change in Current: Upto 10mASpecifications: Cu coated SiO2 Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag

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